Semiconductor light emitting device
文献类型：专利
| 作者 | KUBOTA MASAYUKI |
| 发表日期 | 1991-03-07 |
| 专利号 | JP1991053583A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To obtain a semiconductor light emitting device that the adjustment of an optical axis can be done with a single point and an optical fiber fixed to a light flux projecting end face is free from deterioration by a method wherein a second-conductivity-type active layer and a second-conductivity-type clad layer on an optical guide layer are electrically separated into two or more regions. CONSTITUTION:A light emitting section 12, which is the region of a semiconductor laser element 1 and a current is made to flow through, and an optical coupling section 13 are electrically isolated from each other through an isolating groove 14, so that no current flows between them. By making a current flow in a forward direction through a PN junction formed in the semiconductor laser element 11, light is induced in the N-type active layer 18. The induced light is transmitted to the P-type optical guide layer 17. As the P-type optical guide layer 17 is located at the light emitting section 12 and the optical coupling section 13, light induced in the N-type active layer 18 are guided to the optical coupling section 13, propagates through the P-type optical guide layer 17, and radiated from the optical coupling section 13 as a light flux 3. No current flows on the light flux 3 radiating face of the optical coupling section 13. Therefore, even if an optical fiber 6 is fixed with a resin 21 after the optical axis of the optical fiber 6 is directly aligned with that of the light flux 3, the fiber 6 is protected against deterioration. |
| 公开日期 | 1991-03-07 |
| 申请日期 | 1989-07-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74830]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KUBOTA MASAYUKI. Semiconductor light emitting device. JP1991053583A. 1991-03-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。