Semiconductor laser
文献类型：专利
| 作者 | OGITA SHOICHI |
| 发表日期 | 1989-12-14 |
| 专利号 | JP1989310586A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To make a light intensity distribution flat in a direction of a resonator when the resonator is made larger in length by a method wherein at least an active layer is provided through the whole length of the laser resonator in a light travelling direction and a distributed feedback diffraction grating formed along the active layer is contained only in a central part of the resonator. CONSTITUTION:A part of a diffraction grating 3 near an end face of a distributed-feedback semiconductor laser is removed or the diffraction grating 3 is provided only to a central part of the semiconductor laser, and the semiconductor laser is so structured that an active layer is provided through the whole length of a resonator. Thereby, a light intensity distribution of a laser of this design conforms to that of a laser structure that two types of lasers, a Fabry-Pelot laser and a distributed-feedback laser, are combined and is uniform as shown in in a figure (B), and the laser of this design is small in a spectral line width and operates stably at a high output without causing a multi-wavelength oscillation. And, as the laser is formed to be the same in structure toward a light travelling direction, when an optical output increases, the laser is free from such problems as a multi-wavelength oscillation and a leap in wavelength which used to occur in a conventional type of laser that a laser region provided with an active layer and a waveguide path provided with no active layer are integrated, so that a stable oscillation of laser rays with a single wavelength and a small spectral line width can be realized. |
| 公开日期 | 1989-12-14 |
| 申请日期 | 1988-06-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74834]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | OGITA SHOICHI. Semiconductor laser. JP1989310586A. 1989-12-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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