Semiconductor light-emitting device and manufacture thereof
文献类型：专利
| 作者 | OGITA SHOICHI |
| 发表日期 | 1990-12-25 |
| 专利号 | JP1990309688A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device and manufacture thereof |
| 英文摘要 | PURPOSE:To make it possible to perform the favorable waveguide of light without showing hysteresis characteristics by a method wherein regions, which have a band gap energy laser than that of a plurality of active layers and are transparent with respect to wavelengths of emitted light, are formed at regions pinched between the active layers. CONSTITUTION:Regions 16, which have a band gap energy larger than that of a plurality of active layers 2 and are transparent with respect to wavelengths emitted light, are formed at regions pinched between the active layers 2. Accordingly, the regions 16 do never act as a saturable adsorption region, whose photo absorption coefficient is changed by the intensity of light. Owing to this, an optical loss in the regions 16 is also small and hysteresis characteristics are never shown. Thereby, the favorable waveguide of light can be performed by an optical waveguide layer 4 being linked together continuously. |
| 公开日期 | 1990-12-25 |
| 申请日期 | 1989-05-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74839]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | OGITA SHOICHI. Semiconductor light-emitting device and manufacture thereof. JP1990309688A. 1990-12-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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