Semiconductor laser
文献类型：专利
| 作者 | NAKANO KAZUSHI; IKEDA MASAO; TODA ATSUSHI |
| 发表日期 | 1989-07-11 |
| 专利号 | JP1989175278A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To improve the crystalline property of a p-type clad layer and extend its lifetime characteristics, by causing the carrier concentration of the p-type clad layer adjacent to an active layer to come to a low level in an AlGaInP semiconductor laser. CONSTITUTION:In the case of an AlGaInP semiconductor laser 12, the carrier concentration of a p-type clad layer in a double hetero structure is set below 6X10cm. In other words, an MOCVD process allows an n-type (Al0.5Ga0.5)0.5 In0.5P clad layer 3, an undopped Ga0.5In0.5P active layer 4, a p-type (Al0.5Ga0.5)0.5 In0.5P clad layer 11 where positive hole concentration is 2X10cm, and a p-type GaAs cap layer 6 to grow one after another on an n-type GaAs substrate 2. Required ions are implanted in such a way that the ions reaches the p-type AlGaInP clad layer 11 by leaving the center part of the cap layer 6 in a stripe form and the semiconductor laser 12 is made up by forming an ion-implanted high resistance layer 7. |
| 公开日期 | 1989-07-11 |
| 申请日期 | 1987-12-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74840]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | NAKANO KAZUSHI,IKEDA MASAO,TODA ATSUSHI. Semiconductor laser. JP1989175278A. 1989-07-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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