Distributed feedback semiconductor laser
文献类型：专利
| 作者 | SUZUKI YASUHIRO; IWAMURA HIDETOSHI; MIKAMI OSAMU |
| 发表日期 | 1990-10-05 |
| 专利号 | JP1990249287A |
| 著作权人 | 日本電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed feedback semiconductor laser |
| 英文摘要 | PURPOSE:To facilitate manufacture of a distributed feedback semiconductor laser which requires no wave guide layer besides an active layer and required no regrowth after manufacture of a grating by periodically mixing crystals in a superlattice clad to modulate the refractive index and forming the grating. CONSTITUTION:A clad layer 1, an active layer 2, a p-GaAs/AlAs superlattice clad layer 7, and a cap layer 8 are grown in that order on a substrate 6 and an SiO2 film 10 is formed on the upper face of said cap layer 8. A periodic line-space pattern is made by patterning the SiO2 film 10 by the reactive ion etching(RIE) method, another GaAs wafer 6 is laminated on the patterned SiO2 film 10, and heat treatment is performed. Thereby crystals are mixed in the superlattice under the SiO2 film, the refractive index is changed, and a grating 9 is formed by modulation of the refractive index. |
| 公开日期 | 1990-10-05 |
| 申请日期 | 1988-12-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74845]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | SUZUKI YASUHIRO,IWAMURA HIDETOSHI,MIKAMI OSAMU. Distributed feedback semiconductor laser. JP1990249287A. 1990-10-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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