Manufacture of semiconductor laser
文献类型：专利
| 作者 | ODA TATSUJI; YONEYAMA OSAMU |
| 发表日期 | 1986-04-11 |
| 专利号 | JP1986070780A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To form an excellent protective film having superior coating strength to a resonating surface for a semiconductor laser element by previously applying material layers having heat resistance as lift-off films beforehand shaped onto the surface and back of the resonating surface in order to limitedly applying the protective film onto the resonating surface. CONSTITUTION:Heat-resistant material layers for lifting off protective films are applied onto the whole surfaces of the surfaces 1a and 1b of a crystal plate The heat-resistant material layer is constituted by a material, which sufficiently resists a heating temperature of approximately 200 deg.C required for forming the protective film and can easily be removed by a solvent after heating at the heating temperature, such as silicate glass, doped silicate glass in which an impurity such as phosphorus P is doped to silicate glass, or a polyimide resin. Each semiconductor laser element in the crystal plate 1 is divided, the protective films 12 are applied onto resonating surfaces 11a and 11b for several laser element 11 through a CVD method, an evaporation method, etc., and the heat-resistant material layers 2 are removed by a solvent for the layers 2. |
| 公开日期 | 1986-04-11 |
| 申请日期 | 1984-09-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74848]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | ODA TATSUJI,YONEYAMA OSAMU. Manufacture of semiconductor laser. JP1986070780A. 1986-04-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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