Manufacture of semiconductor device
文献类型：专利
| 作者 | HASHIMOTO AKIHIRO; FUKUNAGA TOSHIAKI; WATANABE NOZOMI |
| 发表日期 | 1990-12-06 |
| 专利号 | JP1990296385A |
| 著作权人 | HIKARI GIJUTSU KENKYU KAIHATSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To make it possible to form easily a light-emitting device structure, which has a refractive index distribution in the horizontal direction and has an internal current constricting structure, on an Si substrate by a method wherein a current constricting layer is formed on the substrate and after a groove, whose bottom and side surface are respectively the face (100) and the face (111), is penetratingly provided in the current constricting layer, the crystal growth of a compound semiconductor is performed. CONSTITUTION:A P-type Si layer 2 and an N-type Si layer 3 are formed in order on the surface of a (100) N-type Si substrate 1 to form a current constricting layer and after a groove 7, whose bottom and side surface are respectively the face (100) and the face (111), is formed in part of this current constricting layer in such a way as to reach the substrate 1, an N-type AlxGa1-xAs layer 8, a GaAs active layer and a P-type AlxGa1-xAs clad layer 10 are formed on the current constricting layer including the part of the groove 7, whereby a luminous layer 9 is made to position in the groove 7. Moreover, a refractive index distribution is provided in the layer 9 in the horizontal direction and light-emitting device structure is formed on the groove part 7 and the current constricting layer. In such a way, a light-emitting device structure, which has an internal current constricting layer and has a refractive index distribution in the horizontal direction, can be easily formed on the Si substrate. |
| 公开日期 | 1990-12-06 |
| 申请日期 | 1989-05-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74858]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HIKARI GIJUTSU KENKYU KAIHATSU KK |
| 推荐引用方式 GB/T 7714 | HASHIMOTO AKIHIRO,FUKUNAGA TOSHIAKI,WATANABE NOZOMI. Manufacture of semiconductor device. JP1990296385A. 1990-12-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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