Semiconductor laser
文献类型：专利
| 作者 | TAKESHIMA MASUMI |
| 发表日期 | 1991-12-20 |
| 专利号 | JP1991290984A |
| 著作权人 | MATSUSHITA ELECTRON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To acquire an SCH laser which can fully contain a carrier inside an active layer while allowing light leak from the active layer by providing a forbidden band width of at least a forbidden band width of each layer adjacent to both sides of the active layer and by providing an 0.03 to 0.2mum thick N-barrier and P-barrier. CONSTITUTION:A 0.08mum thick N-barrier 1 of Ga0.45Al0.35As of doner concentration of 1X10cm and a 0.08mum thick P-barrier 2 of Ga0.45Al0.35As of an acceptor concentration of 1X10cm a are provided to both sides of a 0.1mum thick active layer 11 of undoped GaAs. Thereafter, an N-clad of Ga0.8Al0.2As 12 and a Ga0.5Al0.5As 14 and a Ti/Pt/Au electrode 16 are laminated on an N-layer 1 in specified donner concentration and thickness, and Ga0.8Al0.2As 15 and Ga0.5Al0.5As 15 and an Au/Zn electrode 17 are laminated on the P-barrier layer 2 in specified acceptor concentration and thickness. Selecting freedom of a forbidden band width of outside clad layers 12 to 15 is increased due to formation of thin N and P-type barriers of large forbidden band width. Furthermore, a laser device which allows light to spread easily to the outside clad layer can be acquired while containing a carrier inside the active layer completely. |
| 公开日期 | 1991-12-20 |
| 申请日期 | 1990-04-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74868]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRON CORP |
| 推荐引用方式 GB/T 7714 | TAKESHIMA MASUMI. Semiconductor laser. JP1991290984A. 1991-12-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。