Semiconductor laser device
文献类型：专利
| 作者 | KONO MASAKI |
| 发表日期 | 1990-04-23 |
| 专利号 | JP1990109388A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To prevent remote junction in the region of a light emitting point and to obtain the uniform oscillation yield rate in the surface of a wafer by forcibly inserting a P-AlGaAs remote-junction preventing layer at the upper part of an active layer. CONSTITUTION:A double heterostructure comprising an N-AlGaAs lower clad layer 2, an active layer 3 and a P-AlGaAS upper clad layer 4 is provided on an N-GaAs substrate A semiconductor laser device has said double heterostructure, an N-CaAs current blocking layer 5 and a P-GaAs contact layer 6. In the semiconductor laser device, a P-AlGaAs remote junction preventing layer 9 is inserted between the active layer 3 and the upper clad layer 4. Thus a junction is forcibly formed. In this way, the remote junction due to the fluctuation of P-type dopant in an active region during crystal growing is prevented, the uniform oscillation yield rate in the surface of a wafer is obtained and the temperature characteristic can be improved. |
| 公开日期 | 1990-04-23 |
| 申请日期 | 1988-10-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74870]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KONO MASAKI. Semiconductor laser device. JP1990109388A. 1990-04-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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