Manufacture of semiconductor laser device
文献类型：专利
| 作者 | NANBARA SEIJI; YAGI TETSUYA |
| 发表日期 | 1989-07-27 |
| 专利号 | JP1989187990A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To protect a clad layer from etching, and to manufacture a semiconductor laser having a uniform shape by treating the surface of a wafer by O2 plasma and etching the surface of the wafer by CF4/O2 plasma as a method in which a striped Si3N4 film is removed. CONSTITUTION:An epitaxial wafer in which a third semiconductor layer 4 or even a fifth semiconductor layer 5 on the layer 4 is formed through first epitaxial growth is manufactured, a striped Si3N4 film 6 is shaped onto the epitaxial wafer, and the third semiconductor layer 4 is etched up to depth sufficient for emitting light with the exception of a striped section, using the Si3N4 film 6 as a mask. Fourth semiconductor layers 7 absorbing light are grown in regions except the striped section through second epitaxial growth by the thermal decomposition method of an organometal, and the Si3N4 film 6 is gotten rid of. Accordingly, when a semiconductor laser is manufactured, the surface of the wafer is treated with O2 plasma and the Si3N4 film 6 is plasma-etched with CF4/O2 plasma as a process in which the striped Si3N4 film 6 is taken off. |
| 公开日期 | 1989-07-27 |
| 申请日期 | 1988-01-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74876]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | NANBARA SEIJI,YAGI TETSUYA. Manufacture of semiconductor laser device. JP1989187990A. 1989-07-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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