半導体レ-ザ装置
文献类型：专利
| 作者 | 森 義弘; 石野 正人; 横川 俊哉; 八木田 秀樹 |
| 发表日期 | 1995-02-22 |
| 专利号 | JP1995016079B2 |
| 著作权人 | 松下電器産業株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザ装置 |
| 英文摘要 | PURPOSE:To increase the absorption peak of exciton by forming a fine quantum line at part of a semiconductor layer having a quantum well layer on a first clad layer, using its one side as an absorption type optical modulator and the other side as a semiconductor laser. CONSTITUTION:An N-type AlGaAs clad layer 105 and an N-type AlGaAs guide layer 103 are sequentially grown on an N-type GaAs substrate 11 Then, a periodic groove is selectively formed on the layer 103. The width of the upper side of a trapezoidal section is set to approx. 100-200Angstrom , and its oblique face is formed in a plane A(111) at this time. Thereafter, when an active layer 101 is grown, a triangular crystal (107) is grown on the trapezoid, the width of the quantum well is set to approx. 50-100Angstrom to form a fine quantum line 107. Then, P-type AlGaAs layers 201, 202, and a P-type GaAs layer 203 are formed. Further, a lateral burying, a groove 115, and electrodes 112, 113, 114 are formed to complete it. |
| 公开日期 | 1995-02-22 |
| 申请日期 | 1987-07-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74878]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電器産業株式会社 |
| 推荐引用方式 GB/T 7714 | 森 義弘,石野 正人,横川 俊哉,等. 半導体レ-ザ装置. JP1995016079B2. 1995-02-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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