Semiconductor light-emitting device
文献类型：专利
| 作者 | YOSHIDA KATSUJI; SHIMA KATSUTO |
| 发表日期 | 1984-07-11 |
| 专利号 | JP1984119886A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To stabilize a mode in the lateral direction, and to reduce threshold currents by forming current limiting sections consisting of N type GaAlAs layers in regions holding a stripe region on a substrate consisting of GaAs. CONSTITUTION:A lower clad layer 2 consisting of N type InGaP is formed in the stripe region along an optical axis on the substrate 1 consisting of GaAs, and an active layer 3 consisting of InGaAsP is formed on the lower clad layer 2. An upper clad layer 4 consisting of P type InGaP is formed on the active layer 3, and the current limiting sections 10 consisting of N type GaAlAs layers are formed in the regions holding said stripe region on said substrate 1 consisting of GaAs. |
| 公开日期 | 1984-07-11 |
| 申请日期 | 1982-12-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74882]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | YOSHIDA KATSUJI,SHIMA KATSUTO. Semiconductor light-emitting device. JP1984119886A. 1984-07-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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