Semiconductor laser
文献类型：专利
| 作者 | UEHARA KUNIO |
| 发表日期 | 1986-08-14 |
| 专利号 | JP1986182294A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To enable modulation operation at high speed by specifying carrier density in a cap layer while inverting the conduction type of a section facing a striped active region and also specifying a distance between the section facing the active region and the active region when a buried layer and the cap layer are laminated on the whole surface containing the active region. CONSTITUTION:A clad layer 102, an active layer 103 and a clad layer 104 are laminated and grown on a semiconductor substrate 101, two mesa grooves intruding to the layer 102 are bored, and striped active region 113 is formed between these mesa grooves. First current block layers 201 are shaped on both sides of the region 113, a second current block layer 202 is deposited on the whole surface of the substrate 101, and a buried layer 203 and a cap layer 204 are laminated and grown on the layer 202. In this case, carrier density in the layer 204 is brought to 1X10/cm or less, the conduction type of a section facing the region 113 is inverted previously to a P-type when the conduction type of the layer 204 takes an N-type, and a distance between the section facing the region 113 and the region 113 is specified to 3mum or more. |
| 公开日期 | 1986-08-14 |
| 申请日期 | 1985-02-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74888]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | UEHARA KUNIO. Semiconductor laser. JP1986182294A. 1986-08-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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