Semiconductor laser device
文献类型：专利
| 作者 | ITAYA YOSHIO |
| 发表日期 | 1984-08-10 |
| 专利号 | JP1984139691A |
| 著作权人 | NIPPON DENSHIN DENWA KOSHA |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device in which the width of a gain spectrum is narrowed, and the region of injection current, which is oscillated at a single wavelength, and the temperature extent have been widened by a method wherein an active layer or an optical waveguide path layer, each provided with a diffraction grating, is formed into a multilayer quantum well type structure. CONSTITUTION:An N type InP buffer layer 3 is grown 2mum thick on a (100) face IP substrate according to an MBE or MO-CVD method. After that, a GaInAsP layer with a composition of 5mum of 100Angstrom in thickness and a GaInAsP layer with a composition of 3mum if 150Angstrom in thickness are alternately grown each five layers respectively and the formation of a multilayer quantum well type active layer 4 is performed. After then, a diffraction grating 5 is made on the active layer 4 according to an interference exposure method and a chemical etching technique. Or, a waveguide path layer 8 with a composition of 3mum is grown 0.1-0.24mum thick on the active layer 4 and the diffraction grating 5 is formed on the waveguide path 8. Or, the waveguide path layer 8 is formed with a multilayer quantum well type layer 9, and a GaInAsP layer with a composition of 3mum of 80Angstrom in thickness and a GaInAsP layer with a composition of 1mum of 100Angstrom in thickness are alternately grown each five layers respectively. The diffraction grating 5 is formed on the multilayer quantum well type layer 9, and a p type InP clad layer 6 and a P type GaInAsP layer 7 are formed. |
| 公开日期 | 1984-08-10 |
| 申请日期 | 1983-01-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74892]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENSHIN DENWA KOSHA |
| 推荐引用方式 GB/T 7714 | ITAYA YOSHIO. Semiconductor laser device. JP1984139691A. 1984-08-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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