Semiconductor laser device and its manufacture
文献类型：专利
| 作者 | OTOSHI SO; OISHI AKIO; UOMI KAZUHISA; YAMAGUCHI KEN |
| 发表日期 | 1989-12-13 |
| 专利号 | JP1989309393A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and its manufacture |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser whose efficiency is high and whose high-temperature characteristic is excellent by a method wherein a stepped part is formed at a side part of a mesa and is filled and a position of a P-N interface of a buried layer is aligned with the stepped part with good controllability. CONSTITUTION:A light guide layer 2, an active layer 3, an antimeltback layer 4, a clad layer 5 and a cap layer are grown one after another on a substrate 1 by a liquid growth method. The surface of the substrate 1 is etched by using an etching liquid by making use of a photoresist as a mask; a mesa with a stripe width of 1mum is formed. About 0.1mum of only InP in a mesa part 1a of the substrate 1 and in the clad layer 5 is etched selectively; a stepped part is formed at a boundary between the antimeltback layer 4 and the clad layer 5. Buried layers 7 and 8 are formed by using a liquid growth method. A contact hole is bored; after that, Zn is diffused selectively; a Zn diffusion region 9 is formed. A P-type electrode 11 and an N-type electrode 12 are formed by using an evaporation method. By this setup, a semiconductor laser whose efficiency is high and whose high-temperature characteristic is excellent can be obtained. |
| 公开日期 | 1989-12-13 |
| 申请日期 | 1988-06-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74894]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | OTOSHI SO,OISHI AKIO,UOMI KAZUHISA,et al. Semiconductor laser device and its manufacture. JP1989309393A. 1989-12-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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