Semiconductor laser device
文献类型：专利
| 作者 | YOSHIKAWA AKIO; SUGINO TAKASHI; KUME MASAHIRO; HIROSE MASANORI; YAMAMOTO ATSUYA; NAKAMURA AKIRA |
| 发表日期 | 1989-08-08 |
| 专利号 | JP1989196890A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device oscillated at a fundamental transverse mode by a low threshold current value by effectively injecting electrons and holes to an active layer having striped width of approximately 2mum or less. CONSTITUTION:A recessed section is formed to a substrate 11, and a GaAs buffer layer 12, a P-type AlxGa1-xAs clad layer 13, a multiple quantum well type active layer 14, an N-type AlxGa1-xAs clad layer 15 and an N-type GaAs contact layer 16 are grown into the recessed section. An N-type electrode 19 and P-type electrodes 18 isolated to a striped shape are formed respectively in an ohmic manner. Both electrons and holes in carriers are injected effectively to the multiple quantum well type active layer 14 having striped width of 2mum, and laser beams are also confined effectually into a region having striped width W. Accordingly, a semiconductor laser device oscillated at a fundamental transverse mode at a low threshold current value is acquired. |
| 公开日期 | 1989-08-08 |
| 申请日期 | 1988-02-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74901]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | YOSHIKAWA AKIO,SUGINO TAKASHI,KUME MASAHIRO,et al. Semiconductor laser device. JP1989196890A. 1989-08-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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