Manufacture of semiconductor laser element
文献类型：专利
| 作者 | KUMABE HISAO |
| 发表日期 | 1985-01-09 |
| 专利号 | JP1985003182A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain chips with excellent cleavage planes with high yield by boring intermittent grooves arranged along the predetermined crystalline direction to sections except corner sections, forming cutting lines to the corner sections and dividing the whole by a scriber when a first clad layer, an active layer, a second clad layer, etc. are laminated on a semiconductor substrate and the whole is divided into a plurality of rectangular parallelepiped laser chips. CONSTITUTION:An AlyGa1-yAs first clad layer 2, an AlxGa1-xAs active layer 3 and an AlyGa1-yAs second clad layer 4 are laminated on a GaAs substrate 1 and grown in an epitaxial manner, and the surface of the layer 4 is coated with an SiO2 insulating film 5. A plurality of stripes orthogonal in the direction of cleavage are bored to the film 5 in a order to obtain a 110 cleavage plane having a function as a resonator specular-surface in the end surface of a chip, and a metal is evaporated 6 to the stripes and the stripes are interrupted through etching. Stripes 10 corresponding to the strips are also formed to the back of the substrate 1 and corner sections 9 are channelled mechanically, and a scriber is brought into contact with the grooves and the whole is divided into serveral chip. |
| 公开日期 | 1985-01-09 |
| 申请日期 | 1983-06-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74905]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | KUMABE HISAO. Manufacture of semiconductor laser element. JP1985003182A. 1985-01-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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