Manufacture of semiconductor light emitting device
文献类型：专利
| 作者 | IWASAKI TAMOTSU; KASHIWA SUSUMU |
| 发表日期 | 1987-03-14 |
| 专利号 | JP1987058692A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting device |
| 英文摘要 | PURPOSE:To improve the controllability of the width of an active layer and to improve the controllability and efficiency for burying high-resistance InP into an etching part formed in a double hetero junction by fabricating a semiconductor layer by a predetermined step. CONSTITUTION:On a p-InP substrate 1, a p-InP buffer layer 2, a p-InP cladding layer 3, a p-InGaAsP active layer 4, an n-InP cladding layer 5, and an n-InP cap layer 6 are laminated in order, after which a tungsten film 7 is vapor- deposited. Next, the film 7 is patterned to form a stripe electrode 8 which is then used as a mask for the mesa etching of the layer 6 to 3. Further, the layer 4 is over-etched. Subsequently, mass transportation is done to bury the active layer 4' by the InP layer 10. After that, the buried layer 11 consisting of InP crystal is epitaxially grown to fabricate a semiconductor laser. |
| 公开日期 | 1987-03-14 |
| 申请日期 | 1985-09-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74906]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | IWASAKI TAMOTSU,KASHIWA SUSUMU. Manufacture of semiconductor light emitting device. JP1987058692A. 1987-03-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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