Semiconductor light emitting device
文献类型：专利
| 作者 | SATO SHIRO |
| 发表日期 | 1988-06-16 |
| 专利号 | JP1988143889A |
| 著作权人 | RICOH CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To make it possible to take out an optical output yielded in a light emitting region as a high luminous output in a direction perpendicular to a substrate, by surrounding the upper and lower parts of a region in an active layer, which emits light, with p-type and n-type clad layers, and surrounding the outer surface part with a p-type high concentration impurity region. CONSTITUTION:On an n-type semiconductor substrate 101, an n-type semiconductor clad layer 102, a semiconductor active layer 103 and a p-type semiconductor clad layer are laminated. An approximately cylindrical protruding part 121 is formed in the direction perpendicular to the substrate on the main surface of the substrate. A part of the n-type semiconductor clad layer 102, the semiconductor active layer 103 and a p-type semiconductor clad layer 104 are formed in the protruding part. When impurities for forming p-type are diffused in the protruding part through the side surface of the protruding part, a p-type region 105 is formed around the outer surface part of the protruding cylinder. The upper and lower parts of a region 108, which emits light from the active layer 103, are surrounded with the clad layers 104 and 102. The outer surface part of the cylinder 121 is surrounded with the high concentration impurities yielding p-type. |
| 公开日期 | 1988-06-16 |
| 申请日期 | 1986-12-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74913]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RICOH CO LTD |
| 推荐引用方式 GB/T 7714 | SATO SHIRO. Semiconductor light emitting device. JP1988143889A. 1988-06-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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