Photo-semiconductor device
文献类型：专利
| 作者 | KAMITE KIYOTSUGU; SODA HARUHISA |
| 发表日期 | 1986-03-12 |
| 专利号 | JP1986050386A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Photo-semiconductor device |
| 英文摘要 | PURPOSE:To facilitate the detection of monitor beams without exerting adverse effects on the oscillation characteristics of a distribution feedback (DFB) type semiconductor laser by arranging the periodical unevenness of high degree for extracting the monitor beams adjacently to the periodical unevenness of low degree for generating the laser beams. CONSTITUTION:The primary corrugation 3 comprising the periodical unevenness of low degree for generating laser beams and which is formed along a waveguide direction of a light waveguide region, and the secondary corregation 4 comprising the periodical unevenness of high degree which is arranged adjacently to said periodical unevenness of low degree for extracting the laser beam in a surface direction are arranged on an n type InP substrate Then light accepting element parts 9-14 are arranged with facing them to the periodical unevenness of high degree. The monitor beams 16 are extracted in vertical direction by photocoupling from the secondary corrugation region 4. |
| 公开日期 | 1986-03-12 |
| 申请日期 | 1984-08-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74919]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KAMITE KIYOTSUGU,SODA HARUHISA. Photo-semiconductor device. JP1986050386A. 1986-03-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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