Semiconductor laser
文献类型：专利
| 作者 | SUZAKI SHINZOU |
| 发表日期 | 1985-09-04 |
| 专利号 | JP1985170993A |
| 著作权人 | FUJIKURA DENSEN KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To isolate the upper portion from the sides in a mesa stripe and to suppress leak currents by a method wherein blocking layers are deposited one after another on a substrate along the sides of the mesa stripe with its cross section shaped in an inverted trapezoid. CONSTITUTION:A mesa stripe 1b is formed on an N type substrate 1 and has a cross section of an inverted trapezoid. A P type current-blocking layer 13 is formed on the substrate 1 along the flanks of the mesa stripe 1b. On the layer 13, a clad layer 14 is formed similar to the substrate 1 in the type of conductivity. With the P-N junction formed between the layers 13 and 14 acting as a diode, leak is stopped between the upper diffused region 6 and the semiconductor layers located along the sides of the mesa stripe 1b. A similar leak current screening effect is attained even when a high-resistance semiconductor layer without any conductivity type is employed such as the layer 13. |
| 公开日期 | 1985-09-04 |
| 申请日期 | 1984-02-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74926]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJIKURA DENSEN KK |
| 推荐引用方式 GB/T 7714 | SUZAKI SHINZOU. Semiconductor laser. JP1985170993A. 1985-09-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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