Semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | MATSUDA KAORU |
| 发表日期 | 1988-09-21 |
| 专利号 | JP1988227091A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To form a lens to a semiconductor laser element through a continuous process by executing machining having a lens effect to one or more of beam- outgoing edge faces. CONSTITUTION:An active layer 3 for a distributed feedback type laser element 10 is removed partially through selective etching, and the composition of a clad layer 11 is deposited to the etched active layer section through mass transfer, thus shaping a beam-outgoing end section 12. A Fresnel lens 14 is formed to the beam-outgoing end surface 13 of the beam-outgoing end section 12 by using an electron beam lithography device. Accordingly, a semiconductor laser device having an arbitrary outgoing beam shape is acquired easily in a continuous process. |
| 公开日期 | 1988-09-21 |
| 申请日期 | 1987-03-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74933]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | MATSUDA KAORU. Semiconductor laser device and manufacture thereof. JP1988227091A. 1988-09-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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