Surface emitting semiconductor laser
文献类型：专利
| 作者 | ASATA SUSUMU; KOSAKA HIDEO |
| 发表日期 | 1991-11-22 |
| 专利号 | JP1991263390A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Surface emitting semiconductor laser |
| 英文摘要 | PURPOSE:To make the size of the title laser very small and to lower its oscillation threshold current value by a method wherein the length of at least one side in the direction inside the face of the active region of the laser is set at about a wavelength inside a medium. CONSTITUTION:An n-type semiconductor multilayer film 14, an n-Al0.5Ga0.5As, AlxGa1-xAs 8, undoped In0.2Ga0.8As 7 to be used as an active layer, AlxGa1-xAs 6, p-Al0.5Ga0.5As 5 and a p-type semiconductor multilayer film 13 are formed on an n-GaAs substrate 11 by a molecular beam epitaxial method. At the AlxGa1-xAs, the composition x of Al is changed inside the layer so as to be a radial shape; x=0 where it came into contact with the In0.2Ga0.8As 7. At the n-type semiconductor multilayer film 14, n-GaAs 10 and n-AlAs 9 are set at about 672Angstrom and 804Angstrom , respectively; 22 pairs of them are laminated alternately. At the p-type semiconductor multilayer film 13, p-GaAs 4 and p-AlAs 3 are set at about 672Angstrom and 804Angstrom , respectively; and 15 pairs of them are laminated and formed alternately. The diameter of a cylinder is set at 0.24mum; the sidewall of the active layer is doped with Zn in a depth of about 300Angstrom . The value of 300Angstrom is about 1/10 of an oscillation wavelength inside a medium; and a region doped with Zn is hardly sensitive to light. |
| 公开日期 | 1991-11-22 |
| 申请日期 | 1990-04-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74939]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | ASATA SUSUMU,KOSAKA HIDEO. Surface emitting semiconductor laser. JP1991263390A. 1991-11-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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