Semiconductor laser device
文献类型：专利
| 作者 | YAGI TETSUYA; KIMURA HIDE |
| 发表日期 | 1989-08-23 |
| 专利号 | JP1989209779A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To reduce mode hop noise and return light noise by composing the title device so that the width of a forward mesalike stripelike ridge of a second clad layer has a specific value or larger and the thickness of a second clad layer except the ridge has a specific value or larger. CONSTITUTION:The film thickness (a) of a P-type Al0.49Ga0.51As second clad layer 4 except a forward mesalike stripelike ridge and the width (w) of the ridge are, for example, a=0.4mum and w=4.3mum. A P-N-P-N junction is formed of a contact layer 6, a light absorption layer 5, a second clad layer 4, an active layer 3, and a first clad layer 2 is formed, no current flows, and the current so flows as to indicate a current passage 9. Holes and electrons injected to the layer 3 by the flow of the current are recombined to radiate a light beam. If the flowing current is increased, an induction radiation starts soon, and a laser oscillation will occur. When the (w) is set to 3.5mum or more and the (a) is set to 0.3mum or more, its oscillation mode can be set to a self-pulsation or a pure multimode. |
| 公开日期 | 1989-08-23 |
| 申请日期 | 1988-02-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74940]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | YAGI TETSUYA,KIMURA HIDE. Semiconductor laser device. JP1989209779A. 1989-08-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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