Semiconductor light emitting device
文献类型：专利
| 作者 | OHNAKA, KIYOSHI; SHIBATA, JUN; SASAI, YOICHI; NAKAO, ICHIRO |
| 发表日期 | 1988-10-18 |
| 专利号 | US4779283 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | A semiconductor laser in which an InGaAsP active layer serving as light emitting layer and formed in the shape of a stripe on the surface of a flat InP first clad layer, and an InP second clad layer that is wider than the InGaAsP active layer and formed on the InGaAsP active layer are buried in an InP burying layer. The stripe direction is the direction, an etched mirror is formed in the vicinity of the end of the active layer, and an opto-electronic integrated circuit is formed by integrating the electric device and photo detecting device on the same substrate. The substrate is a semi-insulating substrate, and the electric device and photo detecting device are formed on the InGaAsp or InGaAs layer formed on the InP burying layer by crystal growth. |
| 公开日期 | 1988-10-18 |
| 申请日期 | 1986-04-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74942]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | OHNAKA, KIYOSHI,SHIBATA, JUN,SASAI, YOICHI,et al. Semiconductor light emitting device. US4779283. 1988-10-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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