半導体レーザ素子の製造方法
文献类型：专利
| 作者 | 的場 昭大; 大柴 小枝子; 小川 洋; 川井 義雄 |
| 发表日期 | 1994-01-26 |
| 专利号 | JP1994007640B2 |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ素子の製造方法 |
| 英文摘要 | PURPOSE:To form a structure, in which a plurality of resonators are arranged in series on the same foundation layer, and to oscillate the title element at a single axial mode by forming striped first and second grooves mutually crossing at right angles extending over the foundation layer from the surface of a current constriction layer. CONSTITUTION:A P-type InP layer 32 is shaped onto the (100) face of an N-type InP substrate 31 through a liquid-phase epitaxial growth method. An etching mask 51 with a window 51a from which the semiconductor layer 32 is exposed is formed to a striped shape in order to form a first groove 35 in the direction and to a striped shape in order to forma second groove 37 in the direction orthogonal to the stripe through a photolithographic technique. The first groove 35 and the second groove 37 reaching the substrate 31 are shaped simultaneously through etching. An N-type InP lower clad layer 39, a P-type InGaAsP active layer 41 and a P-type InP upper clad layer 43 are formed onto the first groove 35, the second groove 37 and a current constriction layer 33 through the liquid-phase epitaxial growth method. InP does not grow in the first groove 35, an inner surface thereof is shaped in a (111)A face, at that time. |
| 公开日期 | 1994-01-26 |
| 申请日期 | 1986-01-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74960]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | 的場 昭大,大柴 小枝子,小川 洋,等. 半導体レーザ素子の製造方法. JP1994007640B2. 1994-01-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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