Semiconductor device
文献类型：专利
| 作者 | UNO TOMOAKI; OGURA MOTOTSUGU; UENOYAMA TAKESHI; NISHII KATSUNORI; KIMURA SOICHI; SAKATA FUSAKO |
| 发表日期 | 1986-08-21 |
| 专利号 | JP1986187391A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To readily form a photowave guide line on an electric circuit by using as a waveguide line material dielectric multilayer structure, thereby eliminating an electric separation between elements. CONSTITUTION:Laser lights emitted from lasers 2, 3, 4, 5, 6, 9, 10 of electro- optical converters in response to electric signals are guided through a photowaveguide line (SiOx clad layers 18, 20, and an SiNx photowaveguide layer 19) of dielectric multilayer structure and again converted by photodiodes 2, 7, 8, 10, 11 of opto-electrical converters into electric signals. At this time, even if electric circuits of Schottky type FETs 13-16 exist on the lower side of the photowaveguide line, there is no problem due to an electric insulation. Thus, the separation of elements is facilitated to be readily integrated. |
| 公开日期 | 1986-08-21 |
| 申请日期 | 1985-02-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74966]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | UNO TOMOAKI,OGURA MOTOTSUGU,UENOYAMA TAKESHI,et al. Semiconductor device. JP1986187391A. 1986-08-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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