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文献类型：专利
| 作者 | HASHIMOTO HIROKAZU; WATANABE TSUTOMU; SUZAKI SHINZO; SUEMATSU YASUHARU |
| 发表日期 | 1993-07-15 |
| 专利号 | JP1993046993B2 |
| 著作权人 | SHINGIJUTSU JIGYODAN |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To inhibit the scattering loss of the propagating light without generating a metalback at the upper surface part of the active waveguide layer as well as to contrive to become hard to generate the center to cause a nonradioactive recombination by providing a metalback preventing layer consisting of the same conductive layer as an undoped layer or the protective layer between the active waveguide layer and the protective layer. CONSTITUTION:A metalback preventing layer 15 is constituted of the same conductive InGaAsP (lambdag=0-4mum) layer as an undoped layer or a protective layer 4. The manufacturing method of this semiconductor laser first is performed by a method wherein an active waveguide layer 3, the metalback preventing layer 15 and the protective layer 4 are formed in order on a buffer layer 2 by epitaxial growth, then the parts other than the active region are etched to form distributed Bragg-reflectors 10 and afterward, an external waveguide layer 5 and an N-type InP clad layer 6 are grown on the upper surfaces of these Bragg-reflectors and the protective layer 4. Then, after an etching is performed in a reverse mesa striped form to the longitudinal direction, a buried growth is performed with an N-type InP layer, a P-type InP layer and an N-type InGaAsP layer on both sides of the laser and moreover, an insulating film 7 and metal electrodes 8 are formed. |
| 公开日期 | 1993-07-15 |
| 申请日期 | 1986-03-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74972]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHINGIJUTSU JIGYODAN |
| 推荐引用方式 GB/T 7714 | HASHIMOTO HIROKAZU,WATANABE TSUTOMU,SUZAKI SHINZO,et al. -. JP1993046993B2. 1993-07-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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