Manufacture of semiconductor laser device
文献类型：专利
| 作者 | KAWADA SEIJI |
| 发表日期 | 1991-03-07 |
| 专利号 | JP1991053581A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser which is small in astigmatism by a method wherein a mesa stripe is formed using an insulating film as a mask for selective growth so as to enable both the ends of the mask to extend much from the edge of the mesa stripe. CONSTITUTION:An N-type (Al0.6Ga0.4)0.5In0.5P layer 2, an active layer 3, a clad layer 4, and a cap layer 5 are successively formed on an N-type GaAs substrate 1 through a low pressure MOVPE method. A stripe-like SiO2 mask 9 7mum in width is formed through photolithography, the cap layer 5 is selectively etched into a mesa shape 3mum in width, in succession the layers under the layer 5 are etched. Thereafter, leaving the mask as it is, a second growth is carried out to form an N-type GaAs layer 6. After the mask is removed, a third growth is executed to form a buried layer 7 and a contact layer 8. Lastly, a P and an N electrodes are formed, and the substrate 1 is so cleaved as to make a cavity 250mum in length and separated into chips. |
| 公开日期 | 1991-03-07 |
| 申请日期 | 1989-07-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74977]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KAWADA SEIJI. Manufacture of semiconductor laser device. JP1991053581A. 1991-03-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。