Distributed feedback semiconductor laser
文献类型：专利
| 作者 | AKIBA SHIGEYUKI; UKOU KATSUYUKI; SAKAI KAZUO; MATSUSHIMA YUUICHI |
| 发表日期 | 1985-06-13 |
| 专利号 | JP1985107884A |
| 著作权人 | KOKUSAI DENSHIN DENWA KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed feedback semiconductor laser |
| 英文摘要 | PURPOSE:To realize a more stable single wavelength operation by the TE mode by a method wherein a loss is selectively given to the TM mode. CONSTITUTION:An N type waveguide layer 2, a luminous layer 3, a buffer layer 4, a P type clad layer 5 and a P type layer 7 are laminated on an N type substrate A periodic unevenness 8 is provided in the layer 2 adjacent to the layer 3 and the laser oscillation is obtained by this unevenness 8. In this constitution, a metal electrode 9 is disposed on a region, where light substantially distributes in the layer thickness direction. In such a structure, the light intensity distribution of the TE mode becomes one as shown by the full line in the diagram. In such an intensity distribution, the light intensity distribution in the TE mode is virtually loss-free due to the electrode 9, while in the TM mode, the value of the magnetic field, which is a component parallel to the layer thickness direction, is a continuous value in all boundaries. The magnetic field is distributed substantially evenly in the interior of metal, different from the electric field. However, the electric field to be produced by the magnetic field is consumed in the interior of metal and the light distribution becomes one as shown by broken lines in the diagram. As a result, the electric field receives a loss as large as a component thereof, which is consumed in the interior of metal. |
| 公开日期 | 1985-06-13 |
| 申请日期 | 1983-11-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/74982]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOKUSAI DENSHIN DENWA KK |
| 推荐引用方式 GB/T 7714 | AKIBA SHIGEYUKI,UKOU KATSUYUKI,SAKAI KAZUO,et al. Distributed feedback semiconductor laser. JP1985107884A. 1985-06-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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