Manufacture of semiconductor laser
文献类型：专利
| 作者 | IMANAKA KOUICHI; HORIKAWA HIDEAKI; SANO KAZUYA; WATANABE AKIRA |
| 发表日期 | 1984-11-29 |
| 专利号 | JP1984210681A |
| 著作权人 | OKI DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To form the end surface of a resonator smoothly and vertically without being strained and damaged by forming the resonator on a substrate of a 001 surface in the 100 direction and forming the end surface of the resonator to a 100 surface by using a chemical etching liquid. CONSTITUTION:A laser wafer 4 is prepared by forming a growth layer 3 on an InP substrate 1 of a 001 face so that an active region 2 consisting of GaInAsP, a laser resonator, is directed in the 100 direction. An electrode 5 is shaped on the wafer 4, and striped etching masks 6 using cavity length as width are formed on the electrode 5 in the 010 direction. The electrode 5 is etched while using the masks 6 as masks, and the wafer 4 is etched up to the lower section of the region 2 by an etchent having large surface orientation dependency. Consequently, an etching end surface forms verticality, a 100 face, and a Fabry- Perot specular surface is constituted. According to the method, the end surface of the resonator can be formed vertically through chemical etching, and the end surface of the resonator is not strained and damaged. |
| 公开日期 | 1984-11-29 |
| 申请日期 | 1983-05-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75000]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | IMANAKA KOUICHI,HORIKAWA HIDEAKI,SANO KAZUYA,et al. Manufacture of semiconductor laser. JP1984210681A. 1984-11-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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