Junction-type semiconductor light-emitting element
文献类型：专利
| 作者 | INABA FUMIO; ITO HIROMASA; TANIGUCHI KOICHI |
| 发表日期 | 1989-07-17 |
| 专利号 | JP1989179470A |
| 著作权人 | RES DEV CORP OF JAPAN |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Junction-type semiconductor light-emitting element |
| 英文摘要 | PURPOSE:To enhance the efficiency of injection of currents into an active region and to increase modulation speeds by a method wherein a ring-geometry active region is constructed, inside a columnar protrusion, of an active layer same as the columnar protrusion in conductivity type and another active layer surrounding the columnar protrusion. CONSTITUTION:A ring-geometry active region AR is constructed, inside a columnar protrusion P, of an active layer including a double heterojunction built of a layer same as the columnar protrusion P in conductivity type and a diffusion region DR different in conductivity type from the active layer formed to surround the columnar protrusion P. In such a design, the active region AR is substantially reduced in size and, as the result, efficiency is increased in the injection of currents into the active region AR. Carriers may be efficiently contained in the active region AR, an enhanced-brightness light emission may be obtained, modulation speeds may be accelerated, and a higher output may be realized. |
| 公开日期 | 1989-07-17 |
| 申请日期 | 1988-01-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75002]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RES DEV CORP OF JAPAN |
| 推荐引用方式 GB/T 7714 | INABA FUMIO,ITO HIROMASA,TANIGUCHI KOICHI. Junction-type semiconductor light-emitting element. JP1989179470A. 1989-07-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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