Semiconductor device
文献类型：专利
| 作者 | OGURA MOTOTSUGU; YOKOGAWA TOSHIYA; TAKAHASHI YASUHITO |
| 发表日期 | 1988-02-05 |
| 专利号 | JP1988028065A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To obtain good matching of Si for a manufacturing process and reduce cost, by laminating distorted super lattice layers comprising two or more species of II-VI semiconductors on a surface which is formed on one main surface of a semiconductor substrate and which contains insulating materials and metallic materials. CONSTITUTION:By organic metal vapor growth method (MOVPE method), for example, a distorted super-lattice 8 made of ZnTe and CdTe is formed as a base of single crystal epitaxy, and then hetero junction comprising single- crystal thin films 9 and 10 made of p-type ZnCdTe and n-type ZnSe is formed thereon. Because both ZnCdTe and ZnSe on this groove are single crystals, and not shaped in ice columns, they have no trouble on water and organic washing, without their remnants generated by removal of photo-resist, so that this processing can be pretty easily done. Besides, sensitivity, because of single crystal, becomes extremely high, and this device becomes twice or more excellent in characteristics compared with the conventional ones. |
| 公开日期 | 1988-02-05 |
| 申请日期 | 1986-07-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75012]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | OGURA MOTOTSUGU,YOKOGAWA TOSHIYA,TAKAHASHI YASUHITO. Semiconductor device. JP1988028065A. 1988-02-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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