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文献类型：专利
| 作者 | KAYANE NAOKI; SAITO KAZUTOSHI; SHIGE NORYUKI; ITO RYOICHI |
| 发表日期 | 1988-09-16 |
| 专利号 | JP1988046590B2 |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To obtain a large, stable light output in a semiconductor laser device by providing, on a GaAs substrate, a lamination comprising a clad layer, a light guide layer, an active layer and another clad layer, each layer having a mutually regulated refractive index and a forbidden band width. CONSTITUTION:On an n-type GaAs substrate 10, an n-type Ga1-xAlxAs clad layer 1, an n-type Ga1-yAlyAs light-guide layer 2, an undope Ga1-wAlwAs active layer 3, a p-type Ga1-vAlvAs clad layer 4 (wherein x is larger than y, v is larger than w and v is larger than y) are laminated in consecutive order and subjected to the liquid phase epitaxial growth. In this arrangement, the layer 1 has a relatively smaller refractive index than the layer 2 or 3; the width of forbidden band of the layers 4 or 2 is larger than that of the layer 3; and the difference between the widths of forbidden bands of the layers 2 and 3 is larger than 0.15eV. Thereupon, the lamination is striped and its sides are covered by an embedded Ca1-zAlzAs region 6. |
| 公开日期 | 1988-09-16 |
| 申请日期 | 1978-09-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75018]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | KAYANE NAOKI,SAITO KAZUTOSHI,SHIGE NORYUKI,et al. -. JP1988046590B2. 1988-09-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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