Semiconductor laser device
文献类型：专利
| 作者 | NISHIMOTO HIROYUKI |
| 发表日期 | 1988-03-11 |
| 专利号 | JP1988056983A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a modulation bandwidth wider than 10 GHz and excellent reliability, by covering the portion other than the vicinity of a light emitting region with a high resistivity layer, on which a stopper layer is arranged to prevent the diffusion of impurity. CONSTITUTION:On the central protrusion of an N-InP substrate 1, the following are formed in order; i.e. an N-InP buffer layer 2, an InGaAsP active layer 11, a P-InP clad layer 12 P-InGaAsP contact layer 13. Around the protrusion, an InP high resistivity layer 3 and an InGaAsP stopping layer 4 are embedded, on which an InP high resistivity layer 5 an an InGaAsP cap layer 7 are formed in order throughout the whole surface. Impurity diffusion is performed only on the upper part of the central protrusion, and stopped at the P-InGaAs contact layer 13. In this structure, the InGaAsP active layer 11 is surrounded by the high resistivity semiconductor layer 3, so that most of the signal current injected from an electrode metal 9 flows into the InGaAsP active layer 1 Thereby a structure excellent with respect to high frequency response is realized. Further, when a diffusion region of low resistivity is formed by impurity diffusion on the central protrusion, the stopping layer 4 acts as a stopper of diffusion, and thereby the high resistivity is reserved in the high resistivity layer 3 around the active layer 1 Thus the production of superior yield is achieved. |
| 公开日期 | 1988-03-11 |
| 申请日期 | 1986-08-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75524]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | NISHIMOTO HIROYUKI. Semiconductor laser device. JP1988056983A. 1988-03-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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