Semiconductor laser device
文献类型：专利
| 作者 | ONODERA NORIAKI; SATO SHIRO; YOSHIDA TOMOMASA |
| 发表日期 | 1987-07-14 |
| 专利号 | JP1987158383A |
| 著作权人 | RICOH CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To inhibit oscillation threshold currents, to enable room-temperature continuous oscillation and to obtain a semiconductor laser device capable of projecting beams in the direction vertical to the surface of a substrate by forming an active region with a double hetero-junction extending in the direction vertical to the surface of the substrate onto the irregular surface of the substrate. CONSTITUTION:A projection 10a upward projecting from the surface is shaped to an N-type GaAs substrate 10 through a photolithographic technique. The section of the projection 10a may take an arbitrary shape, but it is important that the side surface of the projection is vertical to the surface of the substrate 10. Composite semiconductor layers or multilayer reflecting films 11 consisting of N-type Al0.1Ga0.9As and N-type Al0.4Ga0.6As, an N-type Al0.4Ga0.6As clad layer 12, a GaAs active layer 13, a P-type Al0.4Ga0.6As clad layer 14 and a P-type GaAs cap layer 15 are grown and shaped on the surface of the substrate 10 with the projection 10a in succession through an epitaxial method. Insulating layers 16 are formed onto the horizontal surfaces of the cap layer 15, P-type ohmic electrodes 17 and an N-type ohmic electrode 18 are each attached,and the whole is cut into discrete elements. |
| 公开日期 | 1987-07-14 |
| 申请日期 | 1985-12-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75536]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RICOH CO LTD |
| 推荐引用方式 GB/T 7714 | ONODERA NORIAKI,SATO SHIRO,YOSHIDA TOMOMASA. Semiconductor laser device. JP1987158383A. 1987-07-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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