Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | MOTOSUGI TSUNEJI; HATA SUSUMU; IKEDA MUTSUO; KURUMADA KATSUHIKO |
| 发表日期 | 1985-05-02 |
| 专利号 | JP1985077484A |
| 著作权人 | NIPPON DENSHIN DENWA KOSHA |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To reduce the threshold value of a semiconductor laser and to enhance the efficiency of the laser by bending a P-N junction in an active layer to become a light emitting section and not containing a hetero boundary in the light emitting section. CONSTITUTION:An N type InP clad layer 3, an N type InGaAsP active layer 2, an N type InP clad layer 1 are first formed on an N type InP or semi-insulating InP substrate 4. Then, a resist layer 21 is formed on the layer 1, part 21a is exposed, and then a mask material 22 is formed. Subsequently, the exposed portion is lifted off, and Be ions are implanted to the lifted off portion. After the mask is removed, it is heat treated. Then, a P type electrode 5, an upper N type electrode 6 and a lower N type electrode 6a are formed to complete. Thus, a semiconductor laser is bent in the P-N junction in the active layer of the light emitting section, and carrier is efficiently concentrated in the light emitting section, and a light emitting recombination section does not contain a hetero boundary. Therefore, low threshold value and high efficiency can be provided. |
| 公开日期 | 1985-05-02 |
| 申请日期 | 1983-10-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75559]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENSHIN DENWA KOSHA |
| 推荐引用方式 GB/T 7714 | MOTOSUGI TSUNEJI,HATA SUSUMU,IKEDA MUTSUO,et al. Semiconductor laser and manufacture thereof. JP1985077484A. 1985-05-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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