Manufacture of semiconductor laser device
文献类型：专利
| 作者 | KOIZUMI YOSHIHIRO |
| 发表日期 | 1989-08-31 |
| 专利号 | JP1989218083A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a highly efficient semiconductor laser, by forming a dielectric insulation film into a stripe like shape in the direction of on the plane (100) of a conductivity type semiconductor substrate and forming a high resistance semiconductor layer on the above semiconductor substrate in such a way that its layer contains impurities which form a deep level. CONSTITUTION:A dielectric insulation film 11 which is formed into a stripe like shape is formed in the direction of on the plane (100) of a conductivity type semiconductor substrate 10. Then, a high resistance semiconductor layer 12 containing impurities which form a deep level is formed on the semiconductor substrate 10. And then, layers including: the first clad layer 13 which has the same conductivity type and almost the same composition as those of the semiconductor substrate 10; an active layer 14 which is not doped and has a forbidden band width that is narrower than that of the first clad layer 13; the second clad layer which has the conductivity type opposite to that of the substrate 10 and has nearly the same composition as that of the first clad layer 13 are formed on the foregoing layer 12. In such a case, this device permits the light emitting region of an active layer to be positioned within a range of the thickness of the high resistance semiconductor layer 12 and makes the surface of the second clad layer 15 nearly flat. |
| 公开日期 | 1989-08-31 |
| 申请日期 | 1988-02-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75566]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KOIZUMI YOSHIHIRO. Manufacture of semiconductor laser device. JP1989218083A. 1989-08-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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