Manufacture of optical semiconductor device
文献类型：专利
| 作者 | OTSUKA KENICHI; ABE YUJI; SUGIMOTO HIROSHI; OISHI TOSHIYUKI; MATSUI TERUHITO |
| 发表日期 | 1989-09-13 |
| 专利号 | JP1989230273A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of optical semiconductor device |
| 英文摘要 | PURPOSE:To improve the controllability on the width of an active layer and decrease the damage of a crystal, by forming a thinner InP upper clad layer in the first growth and burying the active layer in a low-temperature phosphorous atmosphere. CONSTITUTION:A P-InP upper clad layer 4 of a grown wafer remains in belt form after elimination with etchant having selectivity to InP and an InGaAsP active layer 3 remains in belt form after elimination with etchant having selectivity to InGaAsP. The active layer 3 can be made narrower than the clad layer 4 by exactly selecting the time to etch for eliminating the InGaAsP active layer 3. The wafer thus processed is held in a phosphorous atmosphere at a proper temperature to perform burying processing. |
| 公开日期 | 1989-09-13 |
| 申请日期 | 1988-03-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75572]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | OTSUKA KENICHI,ABE YUJI,SUGIMOTO HIROSHI,et al. Manufacture of optical semiconductor device. JP1989230273A. 1989-09-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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