Semiconductor element
文献类型：专利
| 作者 | TOYODA YUKIO |
| 发表日期 | 1987-06-08 |
| 专利号 | JP1987126686A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor element |
| 英文摘要 | PURPOSE:To obtain high output power at a high frequency in an extremely high frequency band especially at 50 GHz or more without damages due to heating and without a limit on the output due to restriction on a size, by providing a plurality of semiconductor lasers having different oscillating frequencies; an optical circuit structure, wherein the oscillated lights are mixed; and a microwave resonating structure, whose frequency corresponds to the differential frequency between the oscillated lights. CONSTITUTION:A plurality of semiconductor lasers having different oscillating frequencies, an optical circuit structure mixing the oscillated lights and a microwave resonating structure, whose frequency corresponds to the differential frequency between said oscillated lights are provided. For example, highly accurate interference light exposure is performed twice. Gratings 3, which have different periods in close proximity, are formed on an InP substrate. Then an embedded laser is formed by ordinary processes. At the same time, a Y shaped embedded waveguide 4 is formed, and oscillated outputs on both sides are mixed. At the waveguide part after the mixing, an electrode 5, which has a width obtained from the crystal permittivity and the thickness so that characteristic impedance becomes 50OMEGA, is attached. Thus a high frequency signal is made to be resonated and propagated. SiO2/Au is evaporated on the end surface of the opposite side of the waveguide so that reflectivity becomes 100%. Thus an oscillating element characterized by high output power in an extremely high frequency region of 50 GHz or more is obtained. |
| 公开日期 | 1987-06-08 |
| 申请日期 | 1985-11-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75575]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TOYODA YUKIO. Semiconductor element. JP1987126686A. 1987-06-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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