Semiconductor laser device
文献类型：专利
| 作者 | HATAGOSHI GENICHI; ISHIKAWA MASAYUKI; OKUDA HAJIME; SHIOZAWA HIDEO; UEMATSU YUTAKA |
| 发表日期 | 1989-09-18 |
| 专利号 | JP1989232787A |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To make the thickness of a double hetero-structure section the most adequate by a method wherein the thickness of an active layer is set to be within the range where a specific condition toward a specific refractivity difference determined by refractivities of the active layer and a clad layer and an oscillating wavelength is satisfied. CONSTITUTION:A semiconductor laser device is provided with a double hetero- structure composed of an In(Ga1-XAlX) active layer 12 and two In(Ga1-YAlY)P clad layer (0, with reference to a specific refractivity difference, DELTA=(na-nc)2na, and an oscillating wavelength lambda is satisfied, and moreover it is more desirable that d is so set as to satisfy an equality, d/lambda 0.022DELTA. By these processes, the rise of the threshold current density can be limited to the extent which can be negligible, so that an InGaAlP semiconductor laser low in a threshold value can be realized. |
| 公开日期 | 1989-09-18 |
| 申请日期 | 1988-03-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75576]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | HATAGOSHI GENICHI,ISHIKAWA MASAYUKI,OKUDA HAJIME,et al. Semiconductor laser device. JP1989232787A. 1989-09-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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