Quantum thin line producing method and semiconductor device
文献类型：专利
| 作者 | FUKUSHIMA, YASUMORI; UEDA, TOHRU; KAMIMURA, KUNIO |
| 发表日期 | 2002-02-12 |
| 专利号 | US6346436 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Quantum thin line producing method and semiconductor device |
| 英文摘要 | A nanometer-size quantum thin line is formed on a semiconductor substrate of a Si substrate or the like by means of the general film forming technique, lithographic technique and etching technique. By opportunely using the conventional film forming technique, photolithographic technique and etching technique, a second oxide film that extends in the perpendicular direction is formed on an Si substrate. Then, by removing the second oxide film that extends in the perpendicular direction, a second nitride film located below the film and a first oxide film located below the film by etching, a groove for exposing the Si substrate is formed. Then, a Si thin line is made to epitaxially grow on the exposed portion of the Si substrate. The quantum thin line is thus formed without using any special fine processing technique. The width of the groove can be accurately controlled in nanometers by controlling the film thickness of the second oxide film that is formed by oxidizing the surface of the second nitride film. |
| 公开日期 | 2002-02-12 |
| 申请日期 | 2000-01-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75579]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | FUKUSHIMA, YASUMORI,UEDA, TOHRU,KAMIMURA, KUNIO. Quantum thin line producing method and semiconductor device. US6346436. 2002-02-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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