Semiconductor laser element
文献类型：专利
| 作者 | INADA JIYUNJI |
| 发表日期 | 1987-03-04 |
| 专利号 | JP1987049685A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To reduce the mutual interference between the laser beams oscillated from a laser beam oscillating part and the reflected beams from laser beams once oscillated by a method wherein a reflecting power from a region other than the region containing the laser beam oscillating part is made lower than the reflecting power from the region containing the laser oscillating part. CONSTITUTION:The surface of a cleavage plane 12 as a reflector forming a laser resonator of a semiconductor laser chip 11 is coated with a coating layer 13. The layer 13 is composed of the first coating region 13a containing a laser beam oscillating point C and a second residual coating region 13b. In such a constitution, the reflecting power from a region 13a is higher while that from the region 13b is zero. |
| 公开日期 | 1987-03-04 |
| 申请日期 | 1985-08-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75587]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | INADA JIYUNJI. Semiconductor laser element. JP1987049685A. 1987-03-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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