Optoelectronic integrated circuit and manufacture thereof
文献类型：专利
| 作者 | ONAKA SEIJI; SHIBATA ATSUSHI |
| 发表日期 | 1989-06-05 |
| 专利号 | JP1989143384A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optoelectronic integrated circuit and manufacture thereof |
| 英文摘要 | PURPOSE:To reduce crystal defects generated in a boundary in a base-emitter junction by continuously growing the crystals of the emitter layer, base layer and collector layer of a hetero junction bipolar transistor. CONSTITUTION:An N-type clad layer 2, an active layer 103 having smaller band gap than that of the layer 2, a P-type photoconductive layer 104 having larger band gap than that of the layer 103, and a P-type clad layer 105 are formed on a substrate 101, etched to form ridges, and a clad layer 102 is dug. After the ridges are sequentially buried with an N-type emitter layer 111, a P-type base layer 112, an N-type collector layer 113, and an N-type collector contact layer 114, they are etched to form a P-type graft base diffused layer 117, a P-type anode diffused layer 118, isolating grooves 122, 123, and polarized electrodes 132-135. |
| 公开日期 | 1989-06-05 |
| 申请日期 | 1987-11-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75599]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | ONAKA SEIJI,SHIBATA ATSUSHI. Optoelectronic integrated circuit and manufacture thereof. JP1989143384A. 1989-06-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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