Manufacture of semiconductor laser
文献类型：专利
| 作者 | NIDOU MASAAKI |
| 发表日期 | 1988-07-13 |
| 专利号 | JP1988169785A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser which has low oscillation threshold value and high reliability by averaging the composition a superlattice layer to become an active region except a stripelike region by an impurity diffusing or ion implanting process. CONSTITUTION:An N-type Al0.45Ga0.55As layer 2, a superlattice layer 3 in which an AlAs layer and a GaAs layer are alternately laminated, a P-type Al0.45Ga0.55 As layer 4 and a P-type GaAs layer 5 are sequentially formed on an N-type GaAs substrate 1 by a first MOVPE growth. Then, with an SiO2 film as a mask a stripelike region remains, a Zn-diffused layer 6 of the depth arriving at the layer 3 is formed, and the composition of the layer 3 is averaged. Thereafter, with an SiO2 film 10 as a mask it is selectively etched to the depth which does not arrive at the layer 3 to form a mesa 1 Further, an N-type GaAs 7 is formed by a second MOVPE growth, and a P-type electrode and an N-type electrode are eventually formed. According to this method, a semiconductor laser having lower oscillation threshold and high reliability can be manufactured. |
| 公开日期 | 1988-07-13 |
| 申请日期 | 1987-01-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75602]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | NIDOU MASAAKI. Manufacture of semiconductor laser. JP1988169785A. 1988-07-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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