Semiconductor laser
文献类型：专利
| 作者 | TANAKA HIDENAO; SHIMOKAWA FUSAO; UENISHI YUJI; SHIMADA JUNICHI |
| 发表日期 | 1992-09-09 |
| 专利号 | JP1992253387A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To provide a semiconductor laser having excellent condensing characteristic and a high output for obtaining a stable mode selectivity up to several 100mW. CONSTITUTION:Since a concave mirror 8 is employed at an end face in a semiconductor laser in which one or both of light emitting end faces are formed in an optical waveguide structure of a stable resonator type made of a concave surface perpendicular to a board and at least one of the waveguide of a part of a position having large degree of separating the waveguide from the end face of the concave surface and an electrode injected part is narrowed, a loss of a high order mode becomes larger than a base mode due to diffraction loss of the mirror 8. A concentration of a beam occurs in the structure 7, an electric field distribution of a guided wave mode is narrowed in a surface parallel to an active layer 3 at a position separated from the end face, and since the waveguide may be narrow, the structure for selecting an optimum order mode is stable. |
| 公开日期 | 1992-09-09 |
| 申请日期 | 1991-01-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75606]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | TANAKA HIDENAO,SHIMOKAWA FUSAO,UENISHI YUJI,et al. Semiconductor laser. JP1992253387A. 1992-09-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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