半導体レ-ザ
文献类型：专利
| 作者 | 田中 治夫; 虫上 雅人 |
| 发表日期 | 1996-11-21 |
| 专利号 | JP2584607B2 |
| 著作权人 | ロ-ム 株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザ |
| 英文摘要 | PURPOSE:To improve the stability of longitudinal modes by laser beams by a method wherein the photo waveguide layer of a first clad layer and that of a second clad layer are set at an interval that the photo waveguide layers optically interact with an active layer, and at the same time, the photo waveguide layers generate no laser oscillation by the operating current. CONSTITUTION:A P type AlXGa1-XAs layer 2 (first clad layer) is formed on a P type GaAs substrate The layer 2 consists of a P type AlX'Ga1-X'As layer 21, a P type AlX''Ga1-X''As layer 22 and a P type AlY'Ga1-Y'As layer 23, and the layer 23 is formed between the layers 21 and 22. A nondoped or P type or N type multiplex quantum well type active layer 3 and a second clad layer 4 are formed on these layers. The clad layer 4 consists of an N type AlZ'Ga1-Z'As layer 41, an N type AlZ''Ga1-Z''As layer 42 and an N type AlY''Ga1-Y''As layer 43, and the layer 43 is formed between the layers 41 and 42. The layers 23 and 43 are respectively a photo waveguide layer. The photo waveguide layers 23 and 43 are each set at an interval that the layers 23 and 43 optically interact with the active layer 3, and at the same time, the photo waveguide layers 23 and 43 generate no laser oscillation by the operating current. |
| 公开日期 | 1997-02-26 |
| 申请日期 | 1983-09-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75614]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ロ-ム 株式会社 |
| 推荐引用方式 GB/T 7714 | 田中 治夫,虫上 雅人. 半導体レ-ザ. JP2584607B2. 1996-11-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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