Semiconductor array laser
文献类型：专利
| 作者 | KOKUBO YOSHIHIRO |
| 发表日期 | 1990-05-29 |
| 专利号 | JP1990139986A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor array laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor array laser in one crystal growth process by a method wherein the boundary of a p-n junction is formed in an active layer in a region where the active layer exists in a (100) face and outside the active layer in a region where the active layer exists in a (111) face. CONSTITUTION:As a first cladding layer 3 is doped with high concentration zinc or selenium, the boundary of the doping can be move by diffusing the impurity. At that time, as diffusion is advanced faster to a (111) direction than to a, (100) direction, even in a same active layer 4, a p-n junction exists in the active layer 4 in a (100) face and, in a (111) face, the diffusion is further advanced and reaches a second cladding layer 5 and a p-n junction exists in the second cladding layer 5. At that time, as the p-n junction existing in the active layer 4 has a lower potential than the other one, a current is applied to that part only. By forming such structures periodically, therefore, a semiconductor array laser can be obtained in one crystal growth process. |
| 公开日期 | 1990-05-29 |
| 申请日期 | 1988-11-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75619]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KOKUBO YOSHIHIRO. Semiconductor array laser. JP1990139986A. 1990-05-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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