Semiconductor laser
文献类型：专利
| 作者 | SASAKI YOSHIMITSU; KAJIMURA TAKASHI |
| 发表日期 | 1985-06-13 |
| 专利号 | JP1985107883A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To enable a semiconductor laser to operate more stably even at high temperatures and even during high-output operation by a method wherein an amorphous Si1-S- T.GeS.CT containing hydrogen is used as a material for dielectric films of a higher refractive index out of two kinds of the dielectric films and dielectric films of a lower refractive index, both formed on the end surface of the other side of the semiconductor laser element of the semiconductor laser. CONSTITUTION:A dielectric film 4 is coated on the end surface of one side of a semiconductor laser element 1, while dielectric films 1 of a lower refractive index are coated on the end surface of the other side thereof. Then, dielectric films 2 of a higher refractive index are coated on the end surface of the other side. Material for the film 2 is amorphous Si1-S-T.GeS.CT containing hydrogen. In the process up to here, the semiconductor laser element 11 in a structure of a group of two-layer films is completed. Moreover, when the process is repeated, the semiconductor laser element 11 is completed in a structure of two groups of two-layer films. As a result, by using the films 2 having a high insulating resistance and a low photo absorption coefficient for the high- refractive index films of the laser, the semiconductor laser can operate more stably even at high temperatures and even in high-output operation. |
| 公开日期 | 1985-06-13 |
| 申请日期 | 1983-11-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75628]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | SASAKI YOSHIMITSU,KAJIMURA TAKASHI. Semiconductor laser. JP1985107883A. 1985-06-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。