Semiconductor laser element
文献类型：专利
| 作者 | HAYAKAWA TOSHIROU; MIYAUCHI NOBUYUKI; YANO MORICHIKA |
| 发表日期 | 1984-01-28 |
| 专利号 | JP1984017292A |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To reduce the influence of stress generated according to mounting, and to obtain the GaAlAs semiconductor laser element by a method wherein an active layer in a multilayer crystal is formed separating by the prescribed distances or more respectively from the mounting face and a face on the opposite side from the mounting face. CONSTITUTION:After a current limiting N type GaAs layer 9 of 1mum thickness is made to grow on a P type GaAs substrate 1, a V-shaped groove 10 to reach the substrate 1 is processed by etching. A P type clad layer 2 of 0.15mum thickness. the active layer 3 of 0.1mum thickness, an N type clad layer 4 of 1mum thickness, and an N type GaAs cap layer 5 of 40mum thickness are laminated in order thereon. After the GaAs substrate 1 is processed to 70mum thickness by etching, an electrode 11 on the P-side is formed, and moreover after an electrode 12 on the N-side is formed by evaporation on the cap layer 5, the device is mounted on a copper heat sink. By separating the active layer from the mounting face by 35% or more of element thickness, or by 18% or more from the opposite face, stress generated according to mounting can be reduced, and long life can be obtained. |
| 公开日期 | 1984-01-28 |
| 申请日期 | 1982-07-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75630]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | HAYAKAWA TOSHIROU,MIYAUCHI NOBUYUKI,YANO MORICHIKA. Semiconductor laser element. JP1984017292A. 1984-01-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。